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RJ1U330AAFRGTL Tech Specifications

NCH 250V/33A POWER MOSFET

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer LAPIS Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 1mA
Technology MOSFET (Metal Oxide)
Series Automotive, AEC-Q101
Power Dissipation (Max) 211W (Tc)
Package / Case SC-83
Operating Temperature 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 33A (Ta)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package LPTS
Rds On (Max) @ Id, Vgs 105 mOhm @ 16.5A, 10V
Packaging Tape & Reel (TR)
Other Names RJ1U330AAFRGTLTR
Mounting Type Surface Mount
Manufacturer Standard Lead Time 10 Weeks
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 250V 33A (Ta) 211W (Tc) Surface Mount LPTS
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