RP1E070XNTCR Tech Specifications

MOSFET N-CH 30V 7A MPT6

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer LAPIS Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package MPT6
Power Dissipation (Max) 2W (Ta)
Package / Case 6-SMD, Flat Leads
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 5V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 28 mOhm @ 7A, 10V
Packaging Tape & Reel (TR)
Operating Temperature 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 10V
FET Type N-Channel
Drain to Source Voltage (Vdss) 30V
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RP1E070XNTCR brand manufacturers: LAPIS Semiconductor, Bonchip stock, RP1E070XNTCR reference price. RP1E070XNTCR parameters, RP1E070XNTCR Datasheet PDF and pin diagram description download.You can use the RP1E070XNTCR Pluggable Connectors, DSP Datesheet PDF, find RP1E070XNTCR pin diagram and circuit diagram and usage method of function, RP1E070XNTCR electronics tutorials.You can download from the Bonchip.
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