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RQ3E100MNTB1 Tech Specifications

MOSFET N-CH 30V 10A HSMT8

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer LAPIS Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 1mA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 12.3 mOhm @ 10A, 10V
Packaging Tape & Reel (TR)
Operating Temperature 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 15V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 8-HSMT (3.2x3)
Power Dissipation (Max) 2W (Ta)
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 9.9nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
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RQ3E100MNTB1 Documents

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RQ3E100MNTB1 brand manufacturers: LAPIS Semiconductor, Bonchip stock, RQ3E100MNTB1 reference price. RQ3E100MNTB1 parameters, RQ3E100MNTB1 Datasheet PDF and pin diagram description download.You can use the RQ3E100MNTB1 Pluggable Connectors, DSP Datesheet PDF, find RQ3E100MNTB1 pin diagram and circuit diagram and usage method of function, RQ3E100MNTB1 electronics tutorials.You can download from the Bonchip.
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