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APTC80DA15T1G Tech Specifications

MOSFET N-CH 800V 28A SP1

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Microsemi
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3.9V @ 2mA
Supplier Device Package SP1
Power Dissipation (Max) 277W (Tc)
Package / Case SP1
Mounting Type Chassis Mount
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 28A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 150 mOhm @ 14A, 10V
Packaging Bulk
Operating Temperature -40°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 4507pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 800V
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