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APTM120H57FT3G Tech Specifications

MOSFET 4N-CH 1200V 17A SP3

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Array
Manufacturer Microsemi
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 2.5mA
Rds On (Max) @ Id, Vgs 684 mOhm @ 8.5A, 10V
Packaging Bulk
Operating Temperature -40°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 5155pF @ 25V
FET Type 4 N-Channel (H-Bridge)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package SP3
Power - Max 390W
Package / Case SP3
Mounting Type Chassis Mount
Gate Charge (Qg) (Max) @ Vgs 187nC @ 10V
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 17A
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