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SI4565ADY-T1-E3 Tech Specifications

MOSFET N/P-CH 40V 6.6A 8-SOIC

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Array
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.2V @ 250µA
Series TrenchFET®
Power - Max 3.1W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 6.6A, 5.6A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 39 mOhm @ 5A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 20V
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 40V
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SI4565ADY-T1-E3 Documents

Download datasheets and manufacturer documentation for SI4565ADY-T1-E3

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