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TSM250NB06DCR RLG Tech Specifications

DUAL N-CHANNEL POWER MOSFET 60V,

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array Transistor MOSFET
Manufacturer Taiwan Semiconductor Corporation
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Package / Case 8-PowerTDFN
Operating Temperature -55°C~150°C TJ
Part Status Active
Power - Max 2W Ta 48W Tc
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1461pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
FET Feature Standard
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (5x6)
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7A Ta 30A Tc
Drain to Source Voltage (Vdss) 60V
RoHS Status ROHS3 Compliant
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