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PHB191NQ06LT,118 Tech Specifications

MOSFET N-CH 55V 75A D2PAK

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Nexperia
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2V @ 1mA
Technology MOSFET (Metal Oxide)
Series TrenchMOS™
Power Dissipation (Max) 300W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 95.6nC @ 5V
FET Feature -
Drain to Source Voltage (Vdss) 55V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±15V
Supplier Device Package D2PAK
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 25A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 7665pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
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PHB191NQ06LT,118 Documents

Download datasheets and manufacturer documentation for PHB191NQ06LT,118

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PHB191NQ06LT,118 Nexperia USA Inc. Transistor MOSFET Tunggal
PHB193NQ06T PHNXP IC Panas Khusus 22814
PHB193NQ06T,118 NXP Semiconductors / Freescale Transistor - FET, MOSFET - Tunggal 2542

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