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2N6426G Tech Specifications

2N6426G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Polarity NPN
Power Dissipation 625mW
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Collector Emitter Saturation Voltage 1.2V
Emitter Base Voltage (VEBO) 12V
Height 5.33mm
Width 4.19mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 40V
Terminal Position BOTTOM
Current Rating 500mA
Base Part Number 2N6426
Number of Elements 1
Element Configuration Single
Transistor Type NPN - Darlington
Max Collector Current 500mA
Current - Collector Cutoff (Max) 1μA
Collector Emitter Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Continuous Collector Current 500mA
Length 5.2mm
Radiation Hardening No
Lead Free Lead Free
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2N6426G Documents

Download datasheets and manufacturer documentation for 2N6426G

  • Datasheets

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