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BC635RL1G Tech Specifications

BC635RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature EUROPEAN PART NUMBER
Voltage - Rated DC 45V
Terminal Position BOTTOM
Reach Compliance Code unknown
Frequency 200MHz
Base Part Number BC635
Qualification Status Not Qualified
Element Configuration Single
Gain Bandwidth Product 200MHz
Transistor Type NPN
Max Collector Current 1A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Current Rating 1A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 625mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 45V
hFE Min 25
RoHS Status RoHS Compliant
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BC635RL1G Documents

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