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BC81816MTF Tech Specifications

BC81816MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 30mg
Operating Temperature 150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 310mW
Terminal Form GULL WING
Base Part Number BC818
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Transition Frequency 100MHz
Max Breakdown Voltage 25V
Emitter Base Voltage (VEBO) 5V
Height 930μm
Width 1.3mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Frequency 100MHz
Number of Elements 1
Power Dissipation 310mW
Gain Bandwidth Product 100MHz
Transistor Type NPN
Max Collector Current 800mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 700mV
Collector Base Voltage (VCBO) 30V
hFE Min 100
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
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BC81816MTF Documents

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