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FQA9N90-F109 Tech Specifications

MOSFET N-CH 900V 8.6A TO-3P

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Operating Temperature -55°C~150°C TJ
Series QFET®
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 240W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 45 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.6A Tc
Rise Time 100ns
Vgs (Max) ±30V
Turn-Off Delay Time 135 ns
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 900 mJ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 240W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3 Ω @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 80 ns
Continuous Drain Current (ID) 8.6A
Drain to Source Breakdown Voltage 900V
Radiation Hardening No
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FQA9N90-F109 Documents

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