FQPF70N10 Tech Specifications

FQPF70N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 23MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 62W
Turn On Delay Time 30 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 35A Tc
Rise Time 470ns
Vgs (Max) ±25V
Turn-Off Delay Time 130 ns
Gate to Source Voltage (Vgs) 25V
Height 9.19mm
Width 4.7mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 100V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 35A
Qualification Status Not Qualified
Power Dissipation-Max 62W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 23m Ω @ 17.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 160 ns
Continuous Drain Current (ID) 35A
Drain to Source Breakdown Voltage 100V
Length 10.16mm
RoHS Status ROHS3 Compliant
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