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MMBT2222LT3G Tech Specifications

MMBT2222LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 600mA
Base Part Number MMBT2222
Qualification Status Not Qualified
Element Configuration Single
Gain Bandwidth Product 250MHz
Transistor Type NPN
Max Collector Current 600mA
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1.6V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 285ns
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.75
Voltage - Rated DC 30V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 1.6V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 60V
hFE Min 35
RoHS Status RoHS Compliant
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MMBT2222LT3G Documents

Download datasheets and manufacturer documentation for MMBT2222LT3G

  • Datasheets

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MMBT200 ON Semiconductor Transistor BJT Tunggal
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