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MMBT4401WT1G Tech Specifications

MMBT4401WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 250MHz
Base Part Number MMBT4401
Number of Elements 1
Power Dissipation 150mW
Gain Bandwidth Product 250MHz
Transistor Type NPN
Max Collector Current 600mA
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Transition Frequency 250MHz
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 6V
Turn Off Time-Max (toff) 255ns
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case SC-70, SOT-323
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 150mW
Terminal Form GULL WING
Current Rating 600mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 750mV
Collector Base Voltage (VCBO) 60V
hFE Min 20
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MMBT4401WT1G Documents

Download datasheets and manufacturer documentation for MMBT4401WT1G

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