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MMBT6427 Tech Specifications

MMBT6427 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 39 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Weight 30mg
Packaging Tape & Reel (TR)
Part Status Obsolete
Max Operating Temperature 150°C
Voltage - Rated DC 40V
Current Rating 1.2A
Number of Elements 1
Element Configuration Single
Power - Max 350mW
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 14000 @ 500mA 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Collector Emitter Saturation Voltage 1.2V
Collector Base Voltage (VCBO) 40V
hFE Min 20000
Length 2.92mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 23 hours ago)
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature -55°C~150°C TJ
Published 2016
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Max Power Dissipation 350mW
Base Part Number MMBT6427
Polarity NPN
Power Dissipation 350mW
Transistor Type NPN - Darlington
Max Collector Current 1.2A
Current - Collector Cutoff (Max) 1μA
Collector Emitter Breakdown Voltage 40V
Current - Collector (Ic) (Max) 1.2A
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 12V
Height 930μm
Width 1.3mm
REACH SVHC No SVHC
Lead Free Lead Free
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MMBT6427 Documents

Download datasheets and manufacturer documentation for MMBT6427

  • Datasheets

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