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MPSW01ARLRA Tech Specifications

MPSW01ARLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 240
Current Rating 1A
Base Part Number MPSW01A
JESD-30 Code O-PBCY-T3
Number of Elements 1
Power Dissipation 10mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 500mV
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Transition Frequency 50MHz
Collector Base Voltage (VCBO) 50V
hFE Min 55
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.75
Voltage - Rated DC 40V
Terminal Position BOTTOM
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Gain Bandwidth Product 50MHz
Transistor Type NPN
Max Collector Current 1A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 5V
RoHS Status Non-RoHS Compliant
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MPSW01ARLRA Documents

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