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MUN5211DW1T1 Tech Specifications

TRANS 2NPN PREBIAS 0.25W SOT363

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array Transistor BJT
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Published 2003
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin/Lead (Sn/Pb)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) 240
Current Rating 100mA
Base Part Number MUN52**DW1T
JESD-30 Code R-PDSO-G6
Number of Elements 2
Element Configuration Dual
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Packaging Cut Tape (CT)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 6
Qualification Status Not Qualified
Polarity NPN
Power Dissipation 187mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Continuous Collector Current 100mA
RoHS Status Non-RoHS Compliant
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