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NGB8202NT4G Tech Specifications

SINGLE IGBT, 440V - More Details

Product Attribute Attribute Value
Category Semikonduktor Diskrit / IGBT Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 400V
Terminal Form GULL WING
Current Rating 20A
Base Part Number NGB8202
JESD-30 Code R-PSSO-G2
Rise Time-Max 8000ns
Power Dissipation 150W
Input Type Logic
Polarity/Channel Type N-CHANNEL
Max Collector Current 20A
Max Breakdown Voltage 440V
Test Condition 300V, 9A, 1k Ω, 5V
Turn Off Time-Nom (toff) 18500 ns
Td (on/off) @ 25°C -/5μs
Gate-Emitter Thr Voltage-Max 2.1V
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 440V
Collector Emitter Breakdown Voltage 440V
Turn On Time 6500 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Current - Collector Pulsed (Icm) 50A
Gate-Emitter Voltage-Max 15V
Fall Time-Max (tf) 14000ns
REACH SVHC No SVHC
Lead Free Lead Free
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NGB8202NT4G Documents

Download datasheets and manufacturer documentation for NGB8202NT4G

  • Datasheets

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