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NSBC123EDXV6T1G Tech Specifications

TRANS 2NPN PREBIAS 0.5W SOT563

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array Transistor BJT
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case SOT-563, SOT-666
Number of Pins 6
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Terminal Form FLAT
Current Rating 100mA
Base Part Number NSBC1*
Qualification Status Not Qualified
Polarity NPN
Power Dissipation 357mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 2.2k Ω
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 2
Element Configuration Dual
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
hFE Min 8
Continuous Collector Current 100mA
RoHS Status RoHS Compliant
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NSBC123EDXV6T1G Documents

Download datasheets and manufacturer documentation for NSBC123EDXV6T1G

  • Datasheets

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