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NST847BDP6T5G Tech Specifications

TRANS 2NPN 45V 0.1A SOT963

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array BJT Transistor
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 420mW
Frequency 100MHz
Number of Elements 2
Element Configuration Dual
Power - Max 350mW
Gain Bandwidth Product 100MHz
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 50V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case SOT-963
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Form FLAT
Pin Count 6
Polarity NPN
Power Dissipation 420mW
Transistor Application AMPLIFIER
Transistor Type 2 NPN (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 45V
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 6V
REACH SVHC No SVHC
Lead Free Lead Free
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NST847BDP6T5G Documents

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