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NSVDTA114EET1G
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NSVDTA114EET1G Tech Specifications
Bipolar Transistors - Pre-Biased SS SC75 BR XSTR PNP 50V
Product Attribute | Attribute Value |
---|---|
Category | Semikonduktor Diskrit / Transistor BJT Pra-Bias |
Manufacturer | ON Semiconductor |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 2 Weeks |
Mount | Surface Mount |
Package / Case | SC-75, SOT-416 |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Part Status | Active |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Max Power Dissipation | 200mW |
Terminal Form | GULL WING |
[email protected] Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-G3 |
Configuration | SINGLE WITH BUILT-IN RESISTOR |
Transistor Application | SWITCHING |
Transistor Type | PNP - Pre-Biased |
Max Collector Current | 100mA |
Current - Collector Cutoff (Max) | 500nA |
Collector Emitter Breakdown Voltage | 50V |
Resistor - Emitter Base (R2) | 10 k Ω |
Lead Free | Lead Free |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Mounting Type | Surface Mount |
Transistor Element Material | SILICON |
Published | 2004 |
Pbfree Code | yes |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reference Standard | AEC-Q101 |
Number of Elements | 1 |
Power - Max | 200mW |
Polarity/Channel Type | PNP |
Collector Emitter Voltage (VCEO) | 250mV |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
Resistor - Base (R1) | 10 k Ω |
RoHS Status | ROHS3 Compliant |
NSVDTA114EET1G Documents
Download datasheets and manufacturer documentation for NSVDTA114EET1G
-
Datasheets
Others include "NSVDT" parts
The following parts include 'NSVDT'
Part # | Manufacturer | Category | Availability |
---|---|---|---|
NSVDTA113EM3T5G | AMI Semiconductor / ON Semiconductor | Transistor - Bipolar (BJT) - Tunggal, Pra-Biased | 2770 |
NSVDTA113EM3T5G | ON Semiconductor | Transistor BJT Pra-Bias | |
NSVDTA114EET1G | AMI Semiconductor / ON Semiconductor | Transistor - Bipolar (BJT) - Tunggal, Pra-Biased | 2515 |
NSVDTA114EM3T5G | AMI Semiconductor / ON Semiconductor | Transistor - Bipolar (BJT) - Tunggal, Pra-Biased | 2747 |
NSVDTA114EM3T5G | ON Semiconductor | Transistor BJT Pra-Bias | |
NSVDTA114YM3T5G | AMI Semiconductor / ON Semiconductor | Transistor - Bipolar (BJT) - Tunggal, Pra-Biased | 2600 |
NSVDTA114YM3T5G | ON Semiconductor | Transistor BJT Pra-Bias | |
NSVDTA115EET1G | AMI Semiconductor / ON Semiconductor | Transistor - Bipolar (BJT) - Tunggal, Pra-Biased | 30215 |
NSVDTA115EET1G | ON Semiconductor | Transistor BJT Pra-Bias | |
NSVDTA123EM3T5G | AMI Semiconductor / ON Semiconductor | Transistor - Bipolar (BJT) - Tunggal, Pra-Biased | 2557 |
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NSVDTA114EET1G brand manufacturers: ON Semiconductor, Bonchip stock, NSVDTA114EET1G reference price. NSVDTA114EET1G parameters, NSVDTA114EET1G Datasheet PDF and pin diagram description download.You can use the NSVDTA114EET1G Pluggable Connectors, DSP Datesheet PDF, find NSVDTA114EET1G pin diagram and circuit diagram and usage method of function, NSVDTA114EET1G electronics tutorials.You can download from the Bonchip.
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