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NTD4804N-1G Tech Specifications

MOSFET N-CH 30V 14.5A IPAK

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Power Dissipation-Max 1.43W Ta 107W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 14.5A Ta 124A Tc
Rise Time 19ns
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4490pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 117A
Drain-source On Resistance-Max 0.0055Ohm
Pulsed Drain Current-Max (IDM) 230A
Lead Free Lead Free
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