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NTGD4161PT1G Tech Specifications

MOSFET 2P-CH 30V 1.5A 6-TSOP

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array Transistor MOSFET
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2000
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Form GULL WING
Reach Compliance Code unknown
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 160m Ω @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 281pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 12.5 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 600mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Element Configuration Dual
Power Dissipation 1.1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.5A
Rise Time 9.2ns
Fall Time (Typ) 9.2 ns
Continuous Drain Current (ID) -2.1A
Drain Current-Max (Abs) (ID) 1.5A
Pulsed Drain Current-Max (IDM) 10A
FET Feature Logic Level Gate
Lead Free Lead Free
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