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NTMFS4841NHT1G Tech Specifications

MOSFET N-CH 30V 8.6A SO-8FL

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Subcategory FET General Purpose Powers
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Pin Count 8
Number of Elements 1
Element Configuration Single
Power Dissipation 5.7W
Turn On Delay Time 12.1 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.6A Ta 59A Tc
Rise Time 20.6ns
Vgs (Max) ±20V
Turn-Off Delay Time 21.9 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Length 5.1mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-F6
Power Dissipation-Max 870mW Ta 41.7W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2113pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 11.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 2.9 ns
Continuous Drain Current (ID) 13.5A
Drain Current-Max (Abs) (ID) 59A
Height 1.1mm
Width 6.1mm
RoHS Status ROHS3 Compliant
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