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NTMFS6B03NT1G Tech Specifications

NTMFS6B03NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 3.4W Ta 165W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 19A Ta 132A Tc
Rise Time 46ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 132A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 470A
Length 6.1mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Turn-Off Delay Time 29 ns
Threshold Voltage 4V
Drain-source On Resistance-Max 0.0048Ohm
Height 1.05mm
Width 5.1mm
RoHS Status ROHS3 Compliant
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NTMFS6B03NT1G Documents

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