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RFD12N06RLESM9A Tech Specifications

MOSFET 60V Single

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series UltraFET™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 17A
Number of Elements 1
Element Configuration Single
Power Dissipation 49W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 18A Tc
Rise Time 34ns
Vgs (Max) ±16V
Turn-Off Delay Time 41 ns
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 16V
Height 2.39mm
Width 6.22mm
REACH SVHC Unknown
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~175°C TJ
Published 2002
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 71MOhm
Voltage - Rated DC 60V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 49W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 63m Ω @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds 485pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 17mA
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 60V
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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RFD12N06RLESM9A Documents

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