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DTA114GKAT146 Tech Specifications

TRANS PREBIAS PNP 200MW SMT3

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Pra-Bias
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Not For New Designs
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Terminal Form GULL WING
Current Rating -100mA
Base Part Number DTA114
Max Output Current 100mA
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 10 k Ω
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish TIN SILVER COPPER
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Operating Supply Voltage 50V
Polarity PNP
Power Dissipation 200mW
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA ICBO
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 30
Radiation Hardening No
RoHS Status ROHS3 Compliant
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