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DTA123ECAT116 Tech Specifications

PNP -100MA -50V DIGITAL TRANSIST

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Pra-Bias
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Published 2016
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.75
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Operating Temperature (Max) 150°C
Configuration SINGLE WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 2.2 k Ω
VCEsat-Max 0.3 V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 3
Additional Feature DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 200mW
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power - Max 200mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Emitter Base (R2) 2.2 k Ω
RoHS Status ROHS3 Compliant
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DTA123ECAT116 Documents

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