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STB28N65M2 Tech Specifications

MOSFET N-CH 650V 20A D2PAK

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer STMicroelectronics
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Series MDmesh™ M2
Power Dissipation (Max) 170W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 650V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±25V
Supplier Device Package D2PAK
Rds On (Max) @ Id, Vgs 180 mOhm @ 10A, 10V
Packaging Tape & Reel (TR)
Operating Temperature 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 100V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
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STB28N65M2 Documents

Download datasheets and manufacturer documentation for STB28N65M2

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