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STB34N50DM2AG Tech Specifications

MOSFET N-CH 500V 26A

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer STMicroelectronics
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Series Automotive, AEC-Q101, MDmesh™
Power Dissipation (Max) 190W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 500V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±25V
Supplier Device Package D2PAK
Rds On (Max) @ Id, Vgs 120 mOhm @ 12.5A, 10V
Packaging Original-Reel®
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 100V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
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STB34N50DM2AG Documents

Download datasheets and manufacturer documentation for STB34N50DM2AG

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