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STD11NM60N-1 Tech Specifications

MOSFET N-CH 600V 10A I-PAK

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer STMicroelectronics
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package I-Pak
Rds On (Max) @ Id, Vgs 450 mOhm @ 5A, 10V
Packaging Tube
Operating Temperature 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 50V
FET Type N-Channel
Drain to Source Voltage (Vdss) 600V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series MDmesh™ II
Power Dissipation (Max) 90W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
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STD11NM60N-1 brand manufacturers: STMicroelectronics, Bonchip stock, STD11NM60N-1 reference price. STD11NM60N-1 parameters, STD11NM60N-1 Datasheet PDF and pin diagram description download.You can use the STD11NM60N-1 Pluggable Connectors, DSP Datesheet PDF, find STD11NM60N-1 pin diagram and circuit diagram and usage method of function, STD11NM60N-1 electronics tutorials.You can download from the Bonchip.
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