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TSM850N06CX RFG Tech Specifications

MOSFET N-CHANNEL 60V 3A SOT23

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer TSC (Taiwan Semiconductor)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 85 mOhm @ 2.3A, 10V
Packaging Cut Tape (CT)
Other Names TSM850N06CX RFGCT TSM850N06CX RFGCT-ND TSM850N06CXRFGCT
Mounting Type Surface Mount
Manufacturer Standard Lead Time 28 Weeks
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 30V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 60V 3A (Tc) 1.7W (Tc) Surface Mount SOT-23
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package SOT-23
Power Dissipation (Max) 1.7W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
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TSM850N06CX RFG Documents

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