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RN1110(T5L,F,T) Tech Specifications

TRANS PREBIAS NPN 0.1W SSM

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - Bipolar (BJT) - Tunggal, Pra-Biased
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type NPN - Pre-Biased
Resistor - Emitter Base (R2) (Ohms) -
Power - Max 100mW
Package / Case SC-75, SOT-416
Frequency - Transition 250MHz
Current - Collector Cutoff (Max) 100nA (ICBO)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Supplier Device Package SSM
Resistor - Base (R1) (Ohms) 4.7k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector (Ic) (Max) 100mA
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RN1110(T5L,F,T) Documents

Download datasheets and manufacturer documentation for RN1110(T5L,F,T)

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RN1110ACT(TPL3) Toshiba Semiconductor and Storage Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2553
RN1110CT TOSHIBA IC Panas Khusus 70500
RN1110CT(TPL3) Toshiba Semiconductor and Storage Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2622
RN1110F TOSHIBA IC Panas Khusus 11826
RN1110FS TOSHIBA IC Panas Khusus 10360
RN1110MFV TOSHIBA IC Panas Khusus 136202
RN1110MFV,L3F Toshiba Semiconductor and Storage Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2609

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RN1110(T5L,F,T) brand manufacturers: Toshiba Semiconductor and Storage, Bonchip stock, RN1110(T5L,F,T) reference price. RN1110(T5L,F,T) parameters, RN1110(T5L,F,T) Datasheet PDF and pin diagram description download.You can use the RN1110(T5L,F,T) Pluggable Connectors, DSP Datesheet PDF, find RN1110(T5L,F,T) pin diagram and circuit diagram and usage method of function, RN1110(T5L,F,T) electronics tutorials.You can download from the Bonchip.
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