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RN2310,LF Tech Specifications

TRANS PREBIAS PNP 0.1W USM

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - Bipolar (BJT) - Tunggal, Pra-Biased
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type PNP - Pre-Biased
Resistor - Emitter Base (R2) (Ohms) -
Power - Max 100mW
Package / Case SC-70, SOT-323
Frequency - Transition 200MHz
Current - Collector Cutoff (Max) 100nA (ICBO)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Supplier Device Package USM
Resistor - Base (R1) (Ohms) 4.7k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector (Ic) (Max) 100mA
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RN2310,LF Documents

Download datasheets and manufacturer documentation for RN2310,LF

Others include   "RN231"   parts

The following parts include  'RN231' 

Part # Manufacturer Category Availability
RN2310 TOSHIBA IC Panas Khusus 2941
RN2310(TE85L,F) Toshiba Semiconductor and Storage Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2514
RN2310,LXGF Toshiba Semiconductor and Storage IC Panas Khusus 12000
RN2310LXGF TOS IC Panas Khusus 12457
RN2311 TOSHIBA IC Panas Khusus 3021
RN2311 TE85R TOSHIBA IC Panas Khusus 3437
RN2311(TE85L,F) Toshiba Semiconductor and Storage Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2729
RN2311(YA) TOSHIBA IC Panas Khusus 3000
RN2311,LF TOS IC Panas Khusus 18000
RN2311,LF Toshiba Semiconductor and Storage Transistor BJT Pra-Bias

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RN2310,LF brand manufacturers: Toshiba Semiconductor and Storage, Bonchip stock, RN2310,LF reference price. RN2310,LF parameters, RN2310,LF Datasheet PDF and pin diagram description download.You can use the RN2310,LF Pluggable Connectors, DSP Datesheet PDF, find RN2310,LF pin diagram and circuit diagram and usage method of function, RN2310,LF electronics tutorials.You can download from the Bonchip.
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