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RN4981FE,LF(CT Tech Specifications

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array Transistor BJT
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case SOT-563, SOT-666
Packaging Cut Tape (CT)
Part Status Discontinued
Max Power Dissipation 100mW
Number of Channels 2
Collector Emitter Voltage (VCEO) -50V
Current - Collector Cutoff (Max) 500nA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 250MHz 200MHz
hFE Min 30
Continuous Collector Current -100mA
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Weight 3.005049mg
Published 2017
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Polarity NPN, PNP
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector (Ic) (Max) 100mA
Emitter Base Voltage (VEBO) -10V
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 4.7k Ω
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RN4981FE,LF(CT Documents

Download datasheets and manufacturer documentation for RN4981FE,LF(CT

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