TH58BYG2S3HBAI6 Tech Specifications

IC EEPROM 4GBIT 25NS 67FBGA

Product Attribute Attribute Value
Category Sirkuit Terpadu (IC) / स्मृति
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Supply 1.7 V ~ 1.95 V
Speed 25ns
Packaging Tray
Operating Temperature -40°C ~ 85°C (TA)
Memory Size 4Gb (512M x 8)
Interface Parallel
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 67-VFBGA (6.5x8)
Series Benand™
Package / Case 67-VFBGA
Memory Type Non-Volatile
Memory Format EEPROM
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TH58BYG2S3HBAI6 Documents

Download datasheets and manufacturer documentation for TH58BYG2S3HBAI6

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TH58BVG2S3HTAI0 Toshiba Memory America, Inc. स्मृति 2973
TH58BVG2S3HTAI0 Toshiba Semiconductor and Storage स्मृति 5382
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TH58BVG3S0FTA00 TOSHIBA IC Panas Khusus 349
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TH58BVG3S0HBAI6 IC Toshiba Semiconductor and Storage IC Panas Khusus 3457

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TH58BYG2S3HBAI6 brand manufacturers: Toshiba Semiconductor and Storage, Bonchip stock, TH58BYG2S3HBAI6 reference price. TH58BYG2S3HBAI6 parameters, TH58BYG2S3HBAI6 Datasheet PDF and pin diagram description download.You can use the TH58BYG2S3HBAI6 Pluggable Connectors, DSP Datesheet PDF, find TH58BYG2S3HBAI6 pin diagram and circuit diagram and usage method of function, TH58BYG2S3HBAI6 electronics tutorials.You can download from the Bonchip.
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