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TK35E08N1,S1X Tech Specifications

MOSFET N-CH 80V 55A TO-220

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 300µA
Supplier Device Package TO-220
Rds On (Max) @ Id, Vgs 12.2 mOhm @ 17.5A, 10V
Packaging Tube
Operating Temperature 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V
FET Type N-Channel
Drain to Source Voltage (Vdss) 80V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series U-MOSVIII-H
Power Dissipation (Max) 72W (Tc)
Package / Case TO-220-3
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
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TK35E08N1,S1X Documents

Download datasheets and manufacturer documentation for TK35E08N1,S1X

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TK35E08N1,S1X brand manufacturers: Toshiba Semiconductor and Storage, Bonchip stock, TK35E08N1,S1X reference price. TK35E08N1,S1X parameters, TK35E08N1,S1X Datasheet PDF and pin diagram description download.You can use the TK35E08N1,S1X Pluggable Connectors, DSP Datesheet PDF, find TK35E08N1,S1X pin diagram and circuit diagram and usage method of function, TK35E08N1,S1X electronics tutorials.You can download from the Bonchip.
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