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TK40P03M1(T6RDS-Q) Tech Specifications

MOSFET N-CH 30V 40A DPAK-3

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.3V @ 100µA
Supplier Device Package DPAK
Rds On (Max) @ Id, Vgs 10.8 mOhm @ 20A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 10V
FET Type N-Channel
Drain to Source Voltage (Vdss) 30V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series U-MOSVI-H
Power Dissipation (Max) -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
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TK40P03M1(T6RDS-Q) Documents

Download datasheets and manufacturer documentation for TK40P03M1(T6RDS-Q)

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