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IRFSL11N50APBF Tech Specifications

MOSFET N-CH 500V 11A TO-262

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-262-3
Power Dissipation (Max) 190W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 550 mOhm @ 6.6A, 10V
Packaging Tube
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1426pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 500V
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IRFSL11N50APBF Documents

Download datasheets and manufacturer documentation for IRFSL11N50APBF

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