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SI1422DH-T1-GE3 Tech Specifications

MOSFET N-CH 12V 4A SC70-6

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.56W (Ta), 2.8W (Tc)
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 20nC @ 8V
FET Feature -
Drain to Source Voltage (Vdss) 12V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±8V
Supplier Device Package SC-70-6 (SOT-363)
Rds On (Max) @ Id, Vgs 26 mOhm @ 5.1A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 725pF @ 6V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
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