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SI2316DS-T1-E3 Tech Specifications

MOSFET N-CH 30V 2.9A SOT23-3

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 800mV @ 250µA (Min)
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 700mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs 50 mOhm @ 3.4A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 215pF @ 15V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
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SI2316DS-T1-E3 brand manufacturers: Vishay / Siliconix, Bonchip stock, SI2316DS-T1-E3 reference price. SI2316DS-T1-E3 parameters, SI2316DS-T1-E3 Datasheet PDF and pin diagram description download.You can use the SI2316DS-T1-E3 Pluggable Connectors, DSP Datesheet PDF, find SI2316DS-T1-E3 pin diagram and circuit diagram and usage method of function, SI2316DS-T1-E3 electronics tutorials.You can download from the Bonchip.
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