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SI2365EDS-T1-GE3 Tech Specifications

MOSFET P-CH 20V 5.9A TO-236

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V
FET Feature -
Drain to Source Voltage (Vdss) 20V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±8V
Supplier Device Package TO-236
Rds On (Max) @ Id, Vgs 32 mOhm @ 4A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds -
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C 5.9A (Tc)
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SI2365EDS-T1-GE3 Documents

Download datasheets and manufacturer documentation for SI2365EDS-T1-GE3

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SI2365EDS-T1-GE3 brand manufacturers: Vishay / Siliconix, Bonchip stock, SI2365EDS-T1-GE3 reference price. SI2365EDS-T1-GE3 parameters, SI2365EDS-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SI2365EDS-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, find SI2365EDS-T1-GE3 pin diagram and circuit diagram and usage method of function, SI2365EDS-T1-GE3 electronics tutorials.You can download from the Bonchip.
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