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SI3433BDV-T1-GE3 Tech Specifications

MOSFET P-CH 20V 4.3A 6-TSOP

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 850mV @ 250µA
Supplier Device Package 6-TSOP
Rds On (Max) @ Id, Vgs 42 mOhm @ 5.6A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds -
FET Type P-Channel
Drain to Source Voltage (Vdss) 20V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.1W (Ta)
Package / Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
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SI3433BDV-T1-GE3 Documents

Download datasheets and manufacturer documentation for SI3433BDV-T1-GE3

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