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SI4670DY-T1-E3 Tech Specifications

MOSFET 2N-CH 25V 8A 8SOIC

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Array
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.2V @ 250µA
Series TrenchFET®
Power - Max 2.8W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
FET Feature Logic Level Gate
Current - Continuous Drain (Id) @ 25°C 8A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 23 mOhm @ 7A, 10V
Packaging Original-Reel®
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 13V
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 25V
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