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SI4860DY-T1-GE3 Tech Specifications

MOSFET N-CH 30V 11A 8-SOIC

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 8 mOhm @ 16A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds -
FET Type N-Channel
Drain to Source Voltage (Vdss) 30V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.6W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
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SI4860DY-T1-GE3 Documents

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