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SI5513CDC-T1-GE3 Tech Specifications

MOSFET N/P-CH 20V 4A 1206-8

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Array
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1.5V @ 250µA
Series TrenchFET®
Power - Max 3.1W
Package / Case 8-SMD, Flat Lead
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 5V
FET Feature Logic Level Gate
Current - Continuous Drain (Id) @ 25°C 4A, 3.7A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 1206-8 ChipFET™
Rds On (Max) @ Id, Vgs 55 mOhm @ 4.4A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 285pF @ 10V
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
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