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SI7960DP-T1-GE3 Tech Specifications

MOSFET 2N-CH 60V 6.2A PPAK SO-8

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Array
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3V @ 250µA
Series TrenchFET®
Power - Max 1.4W
Package / Case PowerPAK® SO-8 Dual
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
FET Feature Logic Level Gate
Current - Continuous Drain (Id) @ 25°C 6.2A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs 21 mOhm @ 9.7A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds -
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
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SI7960DP-T1-GE3 brand manufacturers: Vishay / Siliconix, Bonchip stock, SI7960DP-T1-GE3 reference price. SI7960DP-T1-GE3 parameters, SI7960DP-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SI7960DP-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, find SI7960DP-T1-GE3 pin diagram and circuit diagram and usage method of function, SI7960DP-T1-GE3 electronics tutorials.You can download from the Bonchip.
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