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SIHG21N65EF-GE3 Tech Specifications

MOSFET N-CH 650V 21A TO-247AC

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2322pF @ 100V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package TO-247AC
Power Dissipation (Max) 208W (Tc)
Package / Case TO-247-3
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 650V
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