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SIUD412ED-T1-GE3 Tech Specifications

MOSFET N-CH 12V 500MA 0806

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 900mV @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.25W (Ta)
Package / Case PowerPAK® 0806
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 0.71nC @ 4.5V
FET Feature -
Drain to Source Voltage (Vdss) 12V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±5V
Supplier Device Package PowerPAK® 0806
Rds On (Max) @ Id, Vgs 340 mOhm @ 500mA, 4.5V
Packaging Original-Reel®
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 21pF @ 6V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
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SIUD412ED-T1-GE3 Documents

Download datasheets and manufacturer documentation for SIUD412ED-T1-GE3

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SIUD412ED-T1-GE3 Vishay Siliconix Transistor MOSFET Tunggal

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SIUD412ED-T1-GE3 brand manufacturers: Vishay / Siliconix, Bonchip stock, SIUD412ED-T1-GE3 reference price. SIUD412ED-T1-GE3 parameters, SIUD412ED-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SIUD412ED-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, find SIUD412ED-T1-GE3 pin diagram and circuit diagram and usage method of function, SIUD412ED-T1-GE3 electronics tutorials.You can download from the Bonchip.
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